High-Performance Broadband Phototransistor Based on TeO/IGTO Heterojunctions

Area of Science:

• Materials Science
• Optoelectronics
• Nanotechnology

Background:

• Broadband spectral detection is crucial for high-performance photodetection.
• Developing materials with wide spectral response remains a significant technological challenge.

Purpose of the Study:

• To create a low-temperature processed heterostructure for efficient broadband photodetection.
• To investigate the photoelectric properties of a TeO₂/IGTO heterostructure.

Main Methods:

• Fabrication of a 9 nm TeO₂ and 8 nm IGTO heterostructure at 150 °C.
• Characterization of the heterostructure's optical absorption and photoelectric performance.
• Evaluation of photosensor performance under blue light (450 nm) and infrared irradiation (970 nm).

Main Results:

• The TeO₂/IGTO heterostructure exhibits broadband absorption from 300-1500 nm.
• Achieved remarkable detectivity (1.6 × 10¹³ Jones), responsivity (84 A/W), and photosensitivity (1 × 10⁵) under blue light.
• Demonstrated modest infrared detection (responsivity: ~31 A/W, detectivity: ~6 × 10¹¹ Jones), confirming broadband capability.

Conclusions:

• The TeO₂/IGTO heterostructure shows potential for high-performance broadband phototransistors.
• Low-temperature processability enables the design of flexible and stable array optoelectronic devices.
• This work advances the development of sensitive, wide-spectrum optoelectronic sensing materials.