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Theresia Knobloch

Showing results (1-10 of 16) with videos related to

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Nature Nanotechnology|July 8, 2024
Fluoride dielectrics for 2D transistorsTibor Grasser, Michael Waltl, Theresia Knobloch
Nanomaterials (Basel, Switzerland)|October 27, 2022
Challenges for Nanoscale CMOS Logic Based on Two-Dimensional MaterialsTheresia Knobloch, Siegfried Selberherr, Tibor Grasser
ACS Nano|June 8, 2018
Characterization of Single Defects in Ultrascaled MoS<sub>2</sub> Field-Effect TransistorsBernhard Stampfer, Feng Zhang, Yury Yuryevich Illarionov, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 23, 2022
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Michael Waltl, Theresia Knobloch, Konstantinos Tselios, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 22, 2021
Dielectric Properties of Ultrathin CaF<sub>2</sub> Ionic CrystalsChao Wen, Alexander G Banshchikov, Yury Y Illarionov, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 16, 2020
Dielectric Properties of Ultrathin CaF<sub>2</sub> Ionic CrystalsChao Wen, Alexander G Banshchikov, Yury Y Illarionov, et al.
Nature Electronics|July 5, 2022
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuningTheresia Knobloch, Burkay Uzlu, Yury Yu Illarionov, et al.
ACS Nano|March 19, 2025
Stability and Reliability of van der Waals High-κ SrTiO<sub>3</sub> Field-Effect Transistors with Small HysteresisSeyed Mehdi Sattari-Esfahlan, Allen Jian Yang, Rittik Ghosh, et al.
Communications Materials|January 12, 2026
Near-zero hysteresis van der Waals MnAl<sub>2</sub>S<sub>4</sub> field-effect transistors with low minimal threshold voltage degradation and high thermal stabilitySeyed Mehdi Sattari-Esfahlan, Yury Illarionov, Fang Xu, et al.
ACS Nano|March 5, 2025
Two-dimensional Bi<sub>2</sub>SeO<sub>2</sub> and Its Native Insulators for Next-Generation NanoelectronicsPedram Khakbaz, Dominic Waldhoer, Mina Bahrami, et al.
Pageof 2

Showing results (1-10 of 16) with videos related to

Sort By:
Pageof 2
Nature Nanotechnology|July 8, 2024
Fluoride dielectrics for 2D transistorsTibor Grasser, Michael Waltl, Theresia Knobloch
Nanomaterials (Basel, Switzerland)|October 27, 2022
Challenges for Nanoscale CMOS Logic Based on Two-Dimensional MaterialsTheresia Knobloch, Siegfried Selberherr, Tibor Grasser
ACS Nano|June 8, 2018
Characterization of Single Defects in Ultrascaled MoS<sub>2</sub> Field-Effect TransistorsBernhard Stampfer, Feng Zhang, Yury Yuryevich Illarionov, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 23, 2022
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Michael Waltl, Theresia Knobloch, Konstantinos Tselios, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 22, 2021
Dielectric Properties of Ultrathin CaF<sub>2</sub> Ionic CrystalsChao Wen, Alexander G Banshchikov, Yury Y Illarionov, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 16, 2020
Dielectric Properties of Ultrathin CaF<sub>2</sub> Ionic CrystalsChao Wen, Alexander G Banshchikov, Yury Y Illarionov, et al.
Nature Electronics|July 5, 2022
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuningTheresia Knobloch, Burkay Uzlu, Yury Yu Illarionov, et al.
ACS Nano|March 19, 2025
Stability and Reliability of van der Waals High-κ SrTiO<sub>3</sub> Field-Effect Transistors with Small HysteresisSeyed Mehdi Sattari-Esfahlan, Allen Jian Yang, Rittik Ghosh, et al.
Communications Materials|January 12, 2026
Near-zero hysteresis van der Waals MnAl<sub>2</sub>S<sub>4</sub> field-effect transistors with low minimal threshold voltage degradation and high thermal stabilitySeyed Mehdi Sattari-Esfahlan, Yury Illarionov, Fang Xu, et al.
ACS Nano|March 5, 2025
Two-dimensional Bi<sub>2</sub>SeO<sub>2</sub> and Its Native Insulators for Next-Generation NanoelectronicsPedram Khakbaz, Dominic Waldhoer, Mina Bahrami, et al.
Pageof 2