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Thomas Mikolajick

Showing results (51-60 of 73) with videos related to

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ACS Applied Materials & Interfaces|August 29, 2019
Fluid Imprint and Inertial Switching in Ferroelectric La:HfO<sub>2</sub> CapacitorsPratyush Buragohain, Adam Erickson, Pamenas Kariuki, et al.
ACS Applied Materials & Interfaces|June 20, 2026
Gigahertz Cutoff Frequencies and High Gain in Graphene-Based Hot-Electron Transistor Enabled by Material EngineeringCarsten Strobel, André Heinzig, Andre Hiess, et al.
ACS Applied Materials & Interfaces|September 7, 2022
Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin FilmsHanan Alexandra Hsain, Younghwan Lee, Suzanne Lancaster, et al.
Nature Communications|November 18, 2021
High electron mobility in strained GaAs nanowiresLeila Balaghi, Si Shan, Ivan Fotev, et al.
ACS Applied Materials & Interfaces|January 30, 2023
Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al<sub>0.72</sub>Sc<sub>0.28</sub>NRoberto Guido, Patrick D Lomenzo, Md Redwanul Islam, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 30, 2014
Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectricDominik Martin, Johannes Müller, Tony Schenk, et al.
ACS Applied Materials & Interfaces|August 22, 2022
Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current GainCarsten Strobel, Carlos A Chavarin, Karola Richter, et al.
Advanced Healthcare Materials|May 7, 2015
Light Weight and Flexible High-Performance Diagnostic PlatformDaniil Karnaushenko, Bergoi Ibarlucea, Sanghun Lee, et al.
ACS Applied Materials & Interfaces|September 25, 2015
Breakdown and Protection of ALD Moisture Barrier Thin FilmsFrederik Nehm, Hannes Klumbies, Claudia Richter, et al.
Scientific Reports|July 18, 2013
Key concepts behind forming-free resistive switching incorporated with rectifying transport propertiesYao Shuai, Xin Ou, Wenbo Luo, et al.
Pageof 8

Showing results (51-60 of 73) with videos related to

Sort By:
Pageof 8
ACS Applied Materials & Interfaces|August 29, 2019
Fluid Imprint and Inertial Switching in Ferroelectric La:HfO<sub>2</sub> CapacitorsPratyush Buragohain, Adam Erickson, Pamenas Kariuki, et al.
ACS Applied Materials & Interfaces|June 20, 2026
Gigahertz Cutoff Frequencies and High Gain in Graphene-Based Hot-Electron Transistor Enabled by Material EngineeringCarsten Strobel, André Heinzig, Andre Hiess, et al.
ACS Applied Materials & Interfaces|September 7, 2022
Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin FilmsHanan Alexandra Hsain, Younghwan Lee, Suzanne Lancaster, et al.
Nature Communications|November 18, 2021
High electron mobility in strained GaAs nanowiresLeila Balaghi, Si Shan, Ivan Fotev, et al.
ACS Applied Materials & Interfaces|January 30, 2023
Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al<sub>0.72</sub>Sc<sub>0.28</sub>NRoberto Guido, Patrick D Lomenzo, Md Redwanul Islam, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 30, 2014
Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectricDominik Martin, Johannes Müller, Tony Schenk, et al.
ACS Applied Materials & Interfaces|August 22, 2022
Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current GainCarsten Strobel, Carlos A Chavarin, Karola Richter, et al.
Advanced Healthcare Materials|May 7, 2015
Light Weight and Flexible High-Performance Diagnostic PlatformDaniil Karnaushenko, Bergoi Ibarlucea, Sanghun Lee, et al.
ACS Applied Materials & Interfaces|September 25, 2015
Breakdown and Protection of ALD Moisture Barrier Thin FilmsFrederik Nehm, Hannes Klumbies, Claudia Richter, et al.
Scientific Reports|July 18, 2013
Key concepts behind forming-free resistive switching incorporated with rectifying transport propertiesYao Shuai, Xin Ou, Wenbo Luo, et al.
Pageof 8