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Nanoscale Advances|September 28, 2023
A high thermal stability ohmic contact for GaN-based devicesChia-Yi Wu, Tien-Sheng Chao, Yi-Chia ChouNanoscale Research Letters|June 26, 2012
Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free techniqueChun-Jung Su, Tzu-I Tsai, Horng-Chih Lin, et al.Sensors (Basel, Switzerland)|February 28, 2014
Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sinteringLi-Chen Yen, Ming-Tsyr Tang, Fang-Yu Chang, et al.Nanoscale Research Letters|November 4, 2014
Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM applicationFun-Tat Chin, Yu-Hsien Lin, Hsin-Chiang You, et al.Advanced Materials (Deerfield Beach, Fla.)|June 7, 2023
Single-Gate In-Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric SwitchingChing-Hung Chen, Yu-Ting Lai, Ciao-Fen Chen, et al.Pageof 1