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Tony Schenk

Showing results (1-10 of 11) with videos related to

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IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|March 14, 2015
Dynamic leakage current compensation revisitedTony Schenk, Uwe Schroeder, Thomas Mikolajick
ACS Applied Materials & Interfaces|August 27, 2015
Complex Internal Bias Fields in Ferroelectric Hafnium OxideTony Schenk, Michael Hoffmann, Johannes Ocker, et al.
ACS Applied Materials & Interfaces|November 4, 2014
Electric field cycling behavior of ferroelectric hafnium oxideTony Schenk, Uwe Schroeder, Milan Pešić, et al.
ACS Applied Materials & Interfaces|October 3, 2024
Demonstration of 1 V Reliable FeRAM Operation: <i>V</i><sub>c</sub> Engineering Using Quasi-Chirality of Hf<sub>1-</sub>Zr<sub></sub>O<sub>2</sub> in a Nanolaminate StructureHojung Jang, Alireza Kashir, Tony Schenk, et al.
ACS Applied Materials & Interfaces|August 15, 2018
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf <sub>x</sub>Zr<sub>(1- x)</sub>O<sub>2</sub> Ultrathin CapacitorsIgor Stolichnov, Matteo Cavalieri, Enrico Colla, et al.
Nanotechnology|October 22, 2013
Improving feature size uniformity from interference lithography systems with non-uniform intensity profilesEn-Chiang Chang, David Mikolas, Pao-Te Lin, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 10, 2022
Quantification of the Electromechanical Measurements by Piezoresponse Force MicroscopyPratyush Buragohain, Haidong Lu, Claudia Richter, et al.
ACS Applied Materials & Interfaces|August 29, 2019
Fluid Imprint and Inertial Switching in Ferroelectric La:HfO<sub>2</sub> CapacitorsPratyush Buragohain, Adam Erickson, Pamenas Kariuki, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 30, 2014
Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectricDominik Martin, Johannes Müller, Tony Schenk, et al.
Nanoscale|July 7, 2017
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experimentMin Hyuk Park, Young Hwan Lee, Han Joon Kim, et al.
Pageof 2

Showing results (1-10 of 11) with videos related to

Sort By:
Pageof 2
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|March 14, 2015
Dynamic leakage current compensation revisitedTony Schenk, Uwe Schroeder, Thomas Mikolajick
ACS Applied Materials & Interfaces|August 27, 2015
Complex Internal Bias Fields in Ferroelectric Hafnium OxideTony Schenk, Michael Hoffmann, Johannes Ocker, et al.
ACS Applied Materials & Interfaces|November 4, 2014
Electric field cycling behavior of ferroelectric hafnium oxideTony Schenk, Uwe Schroeder, Milan Pešić, et al.
ACS Applied Materials & Interfaces|October 3, 2024
Demonstration of 1 V Reliable FeRAM Operation: <i>V</i><sub>c</sub> Engineering Using Quasi-Chirality of Hf<sub>1-</sub>Zr<sub></sub>O<sub>2</sub> in a Nanolaminate StructureHojung Jang, Alireza Kashir, Tony Schenk, et al.
ACS Applied Materials & Interfaces|August 15, 2018
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf <sub>x</sub>Zr<sub>(1- x)</sub>O<sub>2</sub> Ultrathin CapacitorsIgor Stolichnov, Matteo Cavalieri, Enrico Colla, et al.
Nanotechnology|October 22, 2013
Improving feature size uniformity from interference lithography systems with non-uniform intensity profilesEn-Chiang Chang, David Mikolas, Pao-Te Lin, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 10, 2022
Quantification of the Electromechanical Measurements by Piezoresponse Force MicroscopyPratyush Buragohain, Haidong Lu, Claudia Richter, et al.
ACS Applied Materials & Interfaces|August 29, 2019
Fluid Imprint and Inertial Switching in Ferroelectric La:HfO<sub>2</sub> CapacitorsPratyush Buragohain, Adam Erickson, Pamenas Kariuki, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 30, 2014
Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectricDominik Martin, Johannes Müller, Tony Schenk, et al.
Nanoscale|July 7, 2017
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experimentMin Hyuk Park, Young Hwan Lee, Han Joon Kim, et al.
Pageof 2