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Scientific Reports
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February 16, 2018
Chemically induced Fermi level pinning effects of high-k dielectrics on graphene
So-Young Kim, Yun Ji Kim, Ukjin Jung, et al.
Nanoscale
|
February 13, 2015
A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors
Yun Ji Kim, Young Gon Lee, Ukjin Jung, et al.
Scientific Reports
|
December 20, 2016
Demonstration of Complementary Ternary Graphene Field-Effect Transistors
Yun Ji Kim, So-Young Kim, Jinwoo Noh, et al.
Scientific Reports
|
May 10, 2014
Quantitatively estimating defects in graphene devices using discharge current analysis method
Ukjin Jung, Young Gon Lee, Chang Goo Kang, et al.
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Search research articles
Search
Showing results (1-10 of 4) with videos related to
Sort By:
Page
of 1
Scientific Reports
|
February 16, 2018
Chemically induced Fermi level pinning effects of high-k dielectrics on graphene
So-Young Kim, Yun Ji Kim, Ukjin Jung, et al.
Nanoscale
|
February 13, 2015
A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors
Yun Ji Kim, Young Gon Lee, Ukjin Jung, et al.
Scientific Reports
|
December 20, 2016
Demonstration of Complementary Ternary Graphene Field-Effect Transistors
Yun Ji Kim, So-Young Kim, Jinwoo Noh, et al.
Scientific Reports
|
May 10, 2014
Quantitatively estimating defects in graphene devices using discharge current analysis method
Ukjin Jung, Young Gon Lee, Chang Goo Kang, et al.
Page
of 1