Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Uwe Schroeder

Showing results (1-10 of 30) with videos related to

Pageof 3
Sort By:
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|March 14, 2015
Dynamic leakage current compensation revisitedTony Schenk, Uwe Schroeder, Thomas Mikolajick
Nano Letters|July 31, 2023
Role of Defects in the Breakdown Phenomenon of Al<sub>1-</sub>Sc<sub></sub>N: From Ferroelectric to Filamentary Resistive SwitchingRoberto Guido, Thomas Mikolajick, Uwe Schroeder, et al.
ACS Applied Materials & Interfaces|May 2, 2025
ZrO<sub>2</sub> Based Multilayered Stacks with Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub> or La<sub>2</sub>O<sub>3</sub> Interlayers for SiC Power DevicesSandra Krause, Aleksey Mikhaylov, Uwe Schroeder, et al.
Nanoscale|June 6, 2018
On the stabilization of ferroelectric negative capacitance in nanoscale devicesMichael Hoffmann, Milan Pešić, Stefan Slesazeck, et al.
ACS Applied Materials & Interfaces|August 27, 2015
Complex Internal Bias Fields in Ferroelectric Hafnium OxideTony Schenk, Michael Hoffmann, Johannes Ocker, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|February 14, 2024
Kinetics of N- to M-Polar Switching in Ferroelectric Al<sub>1-x</sub>Sc<sub>x</sub>N CapacitorsRoberto Guido, Haidong Lu, Patrick D Lomenzo, et al.
ACS Applied Materials & Interfaces|November 4, 2014
Electric field cycling behavior of ferroelectric hafnium oxideTony Schenk, Uwe Schroeder, Milan Pešić, et al.
Nano Letters|June 15, 2026
Nucleation-to-Propagation Switching Modes in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> CapacitorsBatzorig Buyantogtokh, Sheung Hun Kim, Hoon Kim, et al.
ACS Applied Materials & Interfaces|July 31, 2024
Ferroelectric Al<sub>0.85</sub>Sc<sub>0.15</sub>N and Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Domain Switching DynamicsRoberto Guido, Xuetao Wang, Bohan Xu, et al.
Nanoscale|December 28, 2020
Stabilizing the ferroelectric phase in HfO<sub>2</sub>-based films sputtered from ceramic targets under ambient oxygenTerence Mittmann, Michail Michailow, Patrick D Lomenzo, et al.
Pageof 3

Showing results (1-10 of 30) with videos related to

Sort By:
Pageof 3
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|March 14, 2015
Dynamic leakage current compensation revisitedTony Schenk, Uwe Schroeder, Thomas Mikolajick
Nano Letters|July 31, 2023
Role of Defects in the Breakdown Phenomenon of Al<sub>1-</sub>Sc<sub></sub>N: From Ferroelectric to Filamentary Resistive SwitchingRoberto Guido, Thomas Mikolajick, Uwe Schroeder, et al.
ACS Applied Materials & Interfaces|May 2, 2025
ZrO<sub>2</sub> Based Multilayered Stacks with Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub> or La<sub>2</sub>O<sub>3</sub> Interlayers for SiC Power DevicesSandra Krause, Aleksey Mikhaylov, Uwe Schroeder, et al.
Nanoscale|June 6, 2018
On the stabilization of ferroelectric negative capacitance in nanoscale devicesMichael Hoffmann, Milan Pešić, Stefan Slesazeck, et al.
ACS Applied Materials & Interfaces|August 27, 2015
Complex Internal Bias Fields in Ferroelectric Hafnium OxideTony Schenk, Michael Hoffmann, Johannes Ocker, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|February 14, 2024
Kinetics of N- to M-Polar Switching in Ferroelectric Al<sub>1-x</sub>Sc<sub>x</sub>N CapacitorsRoberto Guido, Haidong Lu, Patrick D Lomenzo, et al.
ACS Applied Materials & Interfaces|November 4, 2014
Electric field cycling behavior of ferroelectric hafnium oxideTony Schenk, Uwe Schroeder, Milan Pešić, et al.
Nano Letters|June 15, 2026
Nucleation-to-Propagation Switching Modes in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> CapacitorsBatzorig Buyantogtokh, Sheung Hun Kim, Hoon Kim, et al.
ACS Applied Materials & Interfaces|July 31, 2024
Ferroelectric Al<sub>0.85</sub>Sc<sub>0.15</sub>N and Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Domain Switching DynamicsRoberto Guido, Xuetao Wang, Bohan Xu, et al.
Nanoscale|December 28, 2020
Stabilizing the ferroelectric phase in HfO<sub>2</sub>-based films sputtered from ceramic targets under ambient oxygenTerence Mittmann, Michail Michailow, Patrick D Lomenzo, et al.
Pageof 3