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Advanced Materials (Deerfield Beach, Fla.)|June 18, 2016
Heterostructured hBN-BP-hBN Nanodetectors at Terahertz FrequenciesLeonardo Viti, Jin Hu, Dominique Coquillat, et al.
Scientific Reports|September 27, 2023
Sub-terahertz feedback interferometry and imaging with emitters in 130 nm BiCMOS technologyDmytro B But, Kȩstutis Ikamas, Cezary Kołaciński, et al.
Optics Express|April 20, 2011
Broadband terahertz imaging with highly sensitive silicon CMOS detectorsFranz Schuster, Dominique Coquillat, Hadley Videlier, et al.
Micromachines|July 2, 2021
Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise CharacteristicsMaksym Dub, Pavlo Sai, Maciej Sakowicz, et al.
ACS Applied Materials & Interfaces|June 2, 2020
Graphene Epoxy-Based Composites as Efficient Electromagnetic Absorbers in the Extremely High-Frequency BandZahra Barani, Fariborz Kargar, Konrad Godziszewski, et al.
Nano Letters|October 7, 2021
Quantum-Dot Single-Electron Transistors as Thermoelectric Quantum Detectors at Terahertz FrequenciesMahdi Asgari, Dominique Coquillat, Guido Menichetti, et al.
Micromachines|January 9, 2021
AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise CharacteristicsJustinas Jorudas, Artūr Šimukovič, Maksym Dub, et al.
Nano Letters|December 14, 2011
Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistorsMiriam S Vitiello, Dominique Coquillat, Leonardo Viti, et al.
Micromachines|November 27, 2021
Graphene/AlGaN/GaN RF SwitchYevhen Yashchyshyn, Paweł Bajurko, Jakub Sobolewski, et al.
Nanoscale|May 6, 2022
Nature of the 1/f noise in graphene-direct evidence for the mobility fluctuation mechanismAdil Rehman, Juan Antonio Delgado Notario, Juan Salvador Sanchez, et al.
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