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Xuezhou Ma

Showing results (1-10 of 4) with videos related to

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ACS Applied Materials & Interfaces|September 18, 2023
Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance TransistorsHui Quan, Dehuan Meng, Xuezhou Ma, et al.
ACS Nano|February 26, 2025
Self-Anchoring Process to Construct Highly-Aligned-Carbon Nanotube TransistorsJinshuai Lv, Hang Zhou, Xuezhou Ma, et al.
Science Advances|February 13, 2026
Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 VDehuan Meng, Xuezhou Ma, Zizhuo Shen, et al.
Nano Letters|January 24, 2025
Ultralow Power Cold-Fuse Memory Based on Metal-Oxide-CNT StructureWufan Chen, Xueping Li, Xuezhou Ma, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|September 18, 2023
Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance TransistorsHui Quan, Dehuan Meng, Xuezhou Ma, et al.
ACS Nano|February 26, 2025
Self-Anchoring Process to Construct Highly-Aligned-Carbon Nanotube TransistorsJinshuai Lv, Hang Zhou, Xuezhou Ma, et al.
Science Advances|February 13, 2026
Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 VDehuan Meng, Xuezhou Ma, Zizhuo Shen, et al.
Nano Letters|January 24, 2025
Ultralow Power Cold-Fuse Memory Based on Metal-Oxide-CNT StructureWufan Chen, Xueping Li, Xuezhou Ma, et al.
Pageof 1