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Yang-Seok Yoo

Showing results (1-10 of 8) with videos related to

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Scientific Reports|October 21, 2016
Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in fieldYang-Seok Yoo, Jong-Ho Na, Sung Jin Son, et al.
Scientific Reports|August 31, 2017
Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowthYang-Seok Yoo, Hyun Gyu Song, Min-Ho Jang, et al.
Scientific Reports|August 26, 2017
Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devicesSeung-Hyuk Lim, Young Chul Sim, Yang-Seok Yoo, et al.
Scientific Reports|November 21, 2015
Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emissionMohamed Ebaid, Jin-Ho Kang, Yang-Seok Yoo, et al.
Scientific Reports|March 9, 2017
Real-time monitoring and visualization of the multi-dimensional motion of an anisotropic nanoparticleGi-Hyun Go, Seungjin Heo, Jong-Hoi Cho, et al.
Nanotechnology|July 30, 2015
Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalystKyuseung Lee, Sooryong Chae, Jongjin Jang, et al.
Scientific Reports|August 14, 2019
Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealingChulwon Lee, Yang-Seok Yoo, Bugeun Ki, et al.
Nanoscale|February 3, 2018
Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodesYoung Chul Sim, Seung-Hyuk Lim, Yang-Seok Yoo, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
Scientific Reports|October 21, 2016
Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in fieldYang-Seok Yoo, Jong-Ho Na, Sung Jin Son, et al.
Scientific Reports|August 31, 2017
Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowthYang-Seok Yoo, Hyun Gyu Song, Min-Ho Jang, et al.
Scientific Reports|August 26, 2017
Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devicesSeung-Hyuk Lim, Young Chul Sim, Yang-Seok Yoo, et al.
Scientific Reports|November 21, 2015
Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emissionMohamed Ebaid, Jin-Ho Kang, Yang-Seok Yoo, et al.
Scientific Reports|March 9, 2017
Real-time monitoring and visualization of the multi-dimensional motion of an anisotropic nanoparticleGi-Hyun Go, Seungjin Heo, Jong-Hoi Cho, et al.
Nanotechnology|July 30, 2015
Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalystKyuseung Lee, Sooryong Chae, Jongjin Jang, et al.
Scientific Reports|August 14, 2019
Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealingChulwon Lee, Yang-Seok Yoo, Bugeun Ki, et al.
Nanoscale|February 3, 2018
Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodesYoung Chul Sim, Seung-Hyuk Lim, Yang-Seok Yoo, et al.
Pageof 1