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Yeong-Her Wang

Showing results (1-10 of 30) with videos related to

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ACS Applied Materials & Interfaces|April 1, 2014
Resistive switching behavior in gelatin thin films for nonvolatile memory applicationYu-Chi Chang, Yeong-Her Wang
Gels (Basel, Switzerland)|January 20, 2022
Effect of Alkaline Earth Metal on AZrO<sub>x</sub> (A = Mg, Sr, Ba) Memory ApplicationKe-Jing Lee, Yeong-Her Wang
Nanotechnology|February 5, 2014
Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectricSarbani Basu, Feri Adriyanto, Yeong-Her Wang
Physical Chemistry Chemical Physics : PCCP|July 8, 2014
Graphene-based electrodes for enhanced organic thin film transistors based on pentaceneSarbani Basu, Mu Chen Lee, Yeong-Her Wang
Sensors (Basel, Switzerland)|April 30, 2021
Magnesium Zirconate Titanate Thin Films Used as an NO<sub>2</sub> Sensing Layer for Gas Sensor Applications Developed Using a Sol-Gel MethodPei-Shan Huang, Ke-Jing Lee, Yeong-Her Wang
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|March 14, 2026
Optoelectronic-Driven van der Waals Ferroelectric Materials-Based Memory Devices for Retinomorphic and In-Sensory HardwareParthasarathi Pal, Yeong-Her Wang, Sanjay Kumar, et al.
Materials (Basel, Switzerland)|December 23, 2022
Remarkable Reduction in I<sub>G</sub> with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stack Layer AlGaN/GaN MOS-HEMTSoumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, et al.
Materials (Basel, Switzerland)|April 3, 2021
Performance Enhancement in N<sub>2</sub> Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlO<sub>X</sub> Gate Dielectric with Γ-Shaped Gate EngineeringShun-Kai Yang, Soumen Mazumder, Zhan-Gao Wu, et al.
Materials (Basel, Switzerland)|December 27, 2017
Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in GelatinCheng-Jung Lee, Yu-Chi Chang, Li-Wen Wang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 17, 2018
Highly Uniform Resistive Switching Properties of Solution-Processed Silver-Embedded Gelatin Thin FilmYu-Chi Chang, Cheng-Jung Lee, Li-Wen Wang, et al.
Pageof 3

Showing results (1-10 of 30) with videos related to

Sort By:
Pageof 3
ACS Applied Materials & Interfaces|April 1, 2014
Resistive switching behavior in gelatin thin films for nonvolatile memory applicationYu-Chi Chang, Yeong-Her Wang
Gels (Basel, Switzerland)|January 20, 2022
Effect of Alkaline Earth Metal on AZrO<sub>x</sub> (A = Mg, Sr, Ba) Memory ApplicationKe-Jing Lee, Yeong-Her Wang
Nanotechnology|February 5, 2014
Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectricSarbani Basu, Feri Adriyanto, Yeong-Her Wang
Physical Chemistry Chemical Physics : PCCP|July 8, 2014
Graphene-based electrodes for enhanced organic thin film transistors based on pentaceneSarbani Basu, Mu Chen Lee, Yeong-Her Wang
Sensors (Basel, Switzerland)|April 30, 2021
Magnesium Zirconate Titanate Thin Films Used as an NO<sub>2</sub> Sensing Layer for Gas Sensor Applications Developed Using a Sol-Gel MethodPei-Shan Huang, Ke-Jing Lee, Yeong-Her Wang
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|March 14, 2026
Optoelectronic-Driven van der Waals Ferroelectric Materials-Based Memory Devices for Retinomorphic and In-Sensory HardwareParthasarathi Pal, Yeong-Her Wang, Sanjay Kumar, et al.
Materials (Basel, Switzerland)|December 23, 2022
Remarkable Reduction in I<sub>G</sub> with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stack Layer AlGaN/GaN MOS-HEMTSoumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, et al.
Materials (Basel, Switzerland)|April 3, 2021
Performance Enhancement in N<sub>2</sub> Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlO<sub>X</sub> Gate Dielectric with Γ-Shaped Gate EngineeringShun-Kai Yang, Soumen Mazumder, Zhan-Gao Wu, et al.
Materials (Basel, Switzerland)|December 27, 2017
Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in GelatinCheng-Jung Lee, Yu-Chi Chang, Li-Wen Wang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 17, 2018
Highly Uniform Resistive Switching Properties of Solution-Processed Silver-Embedded Gelatin Thin FilmYu-Chi Chang, Cheng-Jung Lee, Li-Wen Wang, et al.
Pageof 3