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Yong Seon Shin

Showing results (1-10 of 9) with videos related to

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ACS Applied Materials & Interfaces|December 20, 2019
Schottky Barrier Variable Graphene/Multilayer-MoS<sub>2</sub> Heterojunction Transistor Used to Overcome Short Channel EffectsIlmin Lee, Joo Nam Kim, Won Tae Kang, et al.
ACS Applied Materials & Interfaces|February 5, 2020
Unveiling the Hot Carrier Distribution in Vertical Graphene/h-BN/Au van der Waals Heterostructures for High-Performance PhotodetectorYoung Rae Kim, Thanh Luan Phan, Yong Seon Shin, et al.
Nano Letters|December 17, 2016
Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh DetectivityQuoc An Vu, Jin Hee Lee, Van Luan Nguyen, et al.
ACS Nano|June 27, 2019
Ultrahigh Gauge Factor in Graphene/MoS<sub>2</sub> Heterojunction Field Effect Transistor with Variable Schottky BarrierIlmin Lee, Won Tae Kang, Yong Seon Shin, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 28, 2025
Robust Metal and Semiconductor Phase Transition Memristor Using Ag-Intercalated Transition Metal DichalcogenideWhan Kyun Kim, Ga Young Cho, Thi Thanh Huong Vu, et al.
ACS Applied Materials & Interfaces|July 3, 2019
Efficient Gate Modulation in a Screening-Engineered MoS<sub>2</sub>/Single-Walled Carbon Nanotube Network Heterojunction Vertical Field-Effect TransistorThanh Luan Phan, Quoc An Vu, Young Rae Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 16, 2018
Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals HeterostructuresYong Seon Shin, Kiyoung Lee, Young Rae Kim, et al.
Nanoscale|June 8, 2018
Direct growth of doping controlled monolayer WSe<sub>2</sub> by selenium-phosphorus substitutionWon Tae Kang, Il Min Lee, Seok Joon Yun, et al.
Nature Communications|September 3, 2016
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratioQuoc An Vu, Yong Seon Shin, Young Rae Kim, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|December 20, 2019
Schottky Barrier Variable Graphene/Multilayer-MoS<sub>2</sub> Heterojunction Transistor Used to Overcome Short Channel EffectsIlmin Lee, Joo Nam Kim, Won Tae Kang, et al.
ACS Applied Materials & Interfaces|February 5, 2020
Unveiling the Hot Carrier Distribution in Vertical Graphene/h-BN/Au van der Waals Heterostructures for High-Performance PhotodetectorYoung Rae Kim, Thanh Luan Phan, Yong Seon Shin, et al.
Nano Letters|December 17, 2016
Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh DetectivityQuoc An Vu, Jin Hee Lee, Van Luan Nguyen, et al.
ACS Nano|June 27, 2019
Ultrahigh Gauge Factor in Graphene/MoS<sub>2</sub> Heterojunction Field Effect Transistor with Variable Schottky BarrierIlmin Lee, Won Tae Kang, Yong Seon Shin, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 28, 2025
Robust Metal and Semiconductor Phase Transition Memristor Using Ag-Intercalated Transition Metal DichalcogenideWhan Kyun Kim, Ga Young Cho, Thi Thanh Huong Vu, et al.
ACS Applied Materials & Interfaces|July 3, 2019
Efficient Gate Modulation in a Screening-Engineered MoS<sub>2</sub>/Single-Walled Carbon Nanotube Network Heterojunction Vertical Field-Effect TransistorThanh Luan Phan, Quoc An Vu, Young Rae Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 16, 2018
Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals HeterostructuresYong Seon Shin, Kiyoung Lee, Young Rae Kim, et al.
Nanoscale|June 8, 2018
Direct growth of doping controlled monolayer WSe<sub>2</sub> by selenium-phosphorus substitutionWon Tae Kang, Il Min Lee, Seok Joon Yun, et al.
Nature Communications|September 3, 2016
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratioQuoc An Vu, Yong Seon Shin, Young Rae Kim, et al.
Pageof 1