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ACS Applied Materials & Interfaces|May 26, 2021
Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn FilmHao-Kai Peng, Yu-Kai Huang, Chuan-Pu Chou, et al.Nanoscale Research Letters|June 18, 2014
Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diodeChia-Chun Lin, Yung-Hsien Wu, You-Tai Chang, et al.ACS Applied Materials & Interfaces|December 10, 2019
Junctionless Poly-GeSn Ferroelectric Thin-Film Transistors with Improved Reliability by Interface Engineering for Neuromorphic ComputingChuan-Pu Chou, Yan-Xiao Lin, Yu-Kai Huang, et al.ACS Applied Materials & Interfaces|November 19, 2015
N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High MobilityYung-Chin Fang, Kuen-Yi Chen, Ching-Heng Hsieh, et al.ACS Applied Materials & Interfaces|July 7, 2015
Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2Hsin-Chueh Chu, Yung-Shao Shen, Ching-Heng Hsieh, et al.Scientific Reports|March 9, 2017
Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping LayerYung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, et al.ACS Applied Materials & Interfaces|March 18, 2015
ZnO/NiO diode-based charge-trapping layer for flash memory featuring low-voltage operationChergn-En Sun, Chin-Yu Chen, Ka-Lip Chu, et al.Pageof 1