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Nanotechnology|July 7, 2011
Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystalsJaewon Jang, Kyoungah Cho, Sang Heon Lee, et al.Journal of Nanoscience and Nanotechnology|November 12, 2013
Influences of electrode materials on the resistive memory switching properties of ZnOxS1-x:Mn thin filmsYong Han, Isaac Chung, Sukhyung Park, et al.Nanotechnology|July 1, 2022
Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual dopingTaekham Kim, Doohyeok Lim, Jaemin Son, et al.Heliyon|July 29, 2024
Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatingsMingu Kang, Kyoungah Cho, Minhyeok Seol, et al.Scientific Reports|March 19, 2024
Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structureJongseong Han, Jaemin Son, Seungho Ryu, et al.Scientific Reports|March 8, 2022
NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistorsYejin Yang, Juhee Jeon, Jaemin Son, et al.Scientific Reports|September 21, 2021
Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap chargesYejin Yang, Young-Soo Park, Jaemin Son, et al.Nanotechnology|May 27, 2009
The transfer of charge carriers photogenerated in ZnO nanoparticles into a single ZnO nanowireHojun Seong, Junggwon Yun, Jin Hyung Jun, et al.Frontiers in Neuroscience|April 12, 2021
Integrate-and-Fire Neuron Circuit Without External Bias VoltagesYoung-Soo Park, Sola Woo, Doohyeok Lim, et al.Nanotechnology|December 30, 2016
Steep switching characteristics of single-gated feedback field-effect transistorsMinsuk Kim, Yoonjoong Kim, Doohyeok Lim, et al.Pageof 10