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Nanotechnology|February 22, 2021
Inverting logic-in-memory cells comprising silicon nanowire feedback field-effect transistorsYoung-Soo Park, Doohyeok Lim, Jaemin Son, et al.Journal of Nanoscience and Nanotechnology|May 14, 2009
Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxidesByoungjun Park, Kyoungah Cho, Junggwon Yun, et al.ACS Applied Materials & Interfaces|January 31, 2020
Performance of Hybrid Energy Devices Consisting of Photovoltaic Cells and Thermoelectric GeneratorsYoonbeom Park, Kyoungah Cho, Seunggen Yang, et al.Scientific Reports|March 4, 2022
Neural oscillation of single silicon nanowire neuron device with no external bias voltageSola Woo, Sangsig KimJournal of Nanoscience and Nanotechnology|March 14, 2021
Steep Switching Characteristics of Partially Gated p+-n+-i-n+ Silicon-Nanowire TransistorsJaemin Son, Doohyeok Lim, Sangsig KimJournal of Nanoscience and Nanotechnology|November 12, 2013
Electrical and optical characteristics of heterojunction devices composed of silicon nanowires and mercury selenide nanoparticle films on flexible plasticsMinje Yeo, Junggwon Yun, Sangsig KimMicromachines|March 29, 2023
Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine LearningSola Woo, Juhee Jeon, Sangsig KimJournal of Nanoscience and Nanotechnology|November 30, 2011
Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowiresKwangeun Kim, Taeho Moon, Sangsig KimPolymers|May 13, 2026
A Dual-Laser Raman Strategy for Fast and Direct Detection and Quantification of Microplastics in WaterHongtaek Kim, Yong Ju Lee, Sangsig KimOptics Express|February 7, 2018
Electrical characteristics of silicon nanowire CMOS inverters under illuminationJeuk Yoo, Yoonjoong Kim, Doohyeok Lim, et al.Pageof 10