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Nature Communications|March 24, 2021
Reconfigurable electronics by disassembling and reassembling van der Waals heterostructuresQuanyang Tao, Ruixia Wu, Qianyuan Li, et al.Nature Communications|January 3, 2024
Ultrashort vertical-channel MoS2 transistor using a self-aligned contactLiting Liu, Yang Chen, Long Chen, et al.Nano Letters|October 20, 2023
Highly Stable HfO2 Memristors through van der Waals Electrode Lamination and DelaminationWei Tong, Wei Wei, Xiangzhe Zhang, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|August 8, 2023
High-Density Vertical Transistors with Pitch Size Down to 20 nmZhaojing Xiao, Liting Liu, Yang Chen, et al.Nano Letters|March 27, 2025
van der Waals Lamination for Effective Bottom Channel Modulation of Oxide TransistorsXiaokun Yang, Donglin Lu, Rui He, et al.Nature Communications|April 24, 2023
Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integrationZheyi Lu, Yang Chen, Weiqi Dang, et al.Nano Letters|January 5, 2024
Edge-by-Edge Lateral Heterostructure through Interfacial SlidingZhiwei Li, Longbin Zhang, Songlong Liu, et al.Nano Letters|December 1, 2023
In Situ Defect Engineering of Controllable Carrier Types in WSe2 for Homomaterial Inverters and Self-Powered PhotodetectorsTing Kang, Zheyi Lu, Liting Liu, et al.Nature Communications|June 6, 2022
Nonlinear co-generation of graphene plasmons for optoelectronic logic operationsYiwei Li, Ning An, Zheyi Lu, et al.ACS Nano|December 28, 2023
Ag-Assisted Dry Exfoliation of Large-Scale and Continuous 2D MonolayersShuimei Ding, Chang Liu, Zhiwei Li, et al.Pageof 3