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Zhitang Song

Showing results (11-20 of 112) with videos related to

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Nano-Micro Letters|June 17, 2021
Ta-Doped Sb<sub>2</sub>Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation CharacteristicsYuan Xue, Shuai Yan, Shilong Lv, et al.
Nanomaterials (Basel, Switzerland)|March 29, 2023
Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and ScalabilityRenjie Wu, Yuting Sun, Shuhao Zhang, et al.
Journal of Nanoscience and Nanotechnology|December 9, 2010
Low-consumption phase change material with good data retention selected from SbxTeYifeng Gu, Ting Zhang, Zhitang Song, et al.
Optics Express|October 6, 2012
Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamicsWeiling Zhu, Yegang Lu, Simian Li, et al.
Micromachines|July 29, 2023
A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature CompensationZhizhi Chen, Qian Wang, Xi Li, et al.
Nanotechnology|April 27, 2010
Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithographyWeimin Zhou, Guoquan Min, Zhitang Song, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 31, 2023
Toward the Speed Limit of Phase-Change MemoryJiabin Shen, Wenxiong Song, Kun Ren, et al.
Scientific Reports|February 25, 2015
Aluminum-centered tetrahedron-octahedron transition in advancing Al-Sb-Te phase change propertiesMengjiao Xia, Keyuan Ding, Feng Rao, et al.
Nanoscale|April 10, 2018
Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memoryWeihua Wu, Zihan Zhao, Bo Shen, et al.
Nanomaterials (Basel, Switzerland)|February 25, 2023
Advantages of Ta-Doped Sb<sub>3</sub>Te<sub>1</sub> Materials for Phase Change Memory ApplicationsMingyue Shao, Yang Qiao, Yuan Xue, et al.
Pageof 12

Showing results (11-20 of 112) with videos related to

Sort By:
Pageof 12
Nano-Micro Letters|June 17, 2021
Ta-Doped Sb<sub>2</sub>Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation CharacteristicsYuan Xue, Shuai Yan, Shilong Lv, et al.
Nanomaterials (Basel, Switzerland)|March 29, 2023
Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and ScalabilityRenjie Wu, Yuting Sun, Shuhao Zhang, et al.
Journal of Nanoscience and Nanotechnology|December 9, 2010
Low-consumption phase change material with good data retention selected from SbxTeYifeng Gu, Ting Zhang, Zhitang Song, et al.
Optics Express|October 6, 2012
Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamicsWeiling Zhu, Yegang Lu, Simian Li, et al.
Micromachines|July 29, 2023
A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature CompensationZhizhi Chen, Qian Wang, Xi Li, et al.
Nanotechnology|April 27, 2010
Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithographyWeimin Zhou, Guoquan Min, Zhitang Song, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 31, 2023
Toward the Speed Limit of Phase-Change MemoryJiabin Shen, Wenxiong Song, Kun Ren, et al.
Scientific Reports|February 25, 2015
Aluminum-centered tetrahedron-octahedron transition in advancing Al-Sb-Te phase change propertiesMengjiao Xia, Keyuan Ding, Feng Rao, et al.
Nanoscale|April 10, 2018
Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memoryWeihua Wu, Zihan Zhao, Bo Shen, et al.
Nanomaterials (Basel, Switzerland)|February 25, 2023
Advantages of Ta-Doped Sb<sub>3</sub>Te<sub>1</sub> Materials for Phase Change Memory ApplicationsMingyue Shao, Yang Qiao, Yuan Xue, et al.
Pageof 12