Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Ruibo Chen

2PUBLICATIONS

6CO-AUTHORS

Photovoltaic power systems

Featured researcher

Get your video featured.

Publish with JoVE

Featured researcher

Get your video featured.

Publish with JoVE

Publications (2)

Sort by Publication Date:

|Sep 05, 2025

P-type buried layer DTSCR with predicted improved overshoot performance and discharge ability for ESD protections of advanced nanotechnology.

Zhengwei Zhang, Shupeng Chen, Hongxia Liu

|Nov 11, 2020

Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process.

Ruibo Chen, Hongxia Liu, Wenqiang Song

Pageof 1

Frequent Collaborators

1 joint publications

Zhengwei Zhang

1 joint publications

Shupeng Chen

1 joint publications

Hongxia Liu

1 joint publications

Shulong Wang

1 joint publications

Longhua Lin

1 joint publications

Wei Huang

Frequent Collaborators

1 joint publications

Zhengwei Zhang

1 joint publications

Shupeng Chen

1 joint publications

Hongxia Liu

1 joint publications

Shulong Wang

Top Related Videos

<em>In Situ</em> Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

<em>In Situ</em> Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on : Jun 26, 2015

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on : Jun 03, 2015

See more related videos

Top Related Videos

<em>In Situ</em> Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

<em>In Situ</em> Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on : Jun 26, 2015

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on : Jun 03, 2015

See more related videos