Hengze Qu
10PUBLICATIONS
7CO-AUTHORS
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Publications (10)
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|Dec 08, 2025
DFT coupled with NEGF study of N-type MOSFET based on 2D Bi2C3semiconductor.Yongjun Huang, Jialin Yang, Weicong Sun
|Aug 22, 2025
Isolated Band Narrowing toward High-Performance 2D SiS p-MOSFETs with Steep-Slope Switching.Weicong Sun, Hengze Qu, Yongjun Huang
|Apr 17, 2025
Influence Mechanism of Vertical Mirror Symmetry on Out-of-Plane Dielectric Properties in 2D Materials.Yang Hu, Hengze Qu, Xuemin Hu
|Jan 20, 2025
First-principles study of anisotropic planar 2D BC2N for sub-5 nm high-performance p-type transistors.Hao Shi, Siyu Yang, Jialin Yang
|Oct 28, 2024
Two-Dimensional ZrS2 and HfS2 for Making Sub-10 nm High-Performance P-Type Transistors.Xuemin Hu, Yu Huang, Hengze Qu
|Sep 13, 2024
Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe2/2H-MoS2 Heterostructure.Shida Huo, Hengze Qu, Fanying Meng
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