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Updated: Oct 6, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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用于内存计算的磁电阻记忆器的横条阵列

Seungchul Jung1, Hyungwoo Lee1, Sungmeen Myung1

  • 1Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, South Korea.

Nature
|January 13, 2022
PubMed
概括

研究人员为低功耗的人工神经网络开发了一种新的64x64 MRAM交叉阵列. 这种内存计算方法使用阻力总和,克服了MRAM

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