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相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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Non-ohmic Devices00:51

Non-ohmic Devices

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In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
284
Zener Diodes01:16

Zener Diodes

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Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...
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Introduction to Nuclear Reprogramming01:14

Introduction to Nuclear Reprogramming

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Nuclear reprogramming is the process of switching gene expression of one cell type to that of another cell type, usually from a differentiated cell state to an undifferentiated cell state. Differentiation occurs during processes such as development and morphogenesis, tissue regeneration, and malignancy. Cells can also be artificially induced to reprogram their gene expression by techniques such as nuclear transfer, induced pluripotency, and cell fusion. Such techniques have many applications in...
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相关实验视频

Updated: Jul 24, 2025

3D Scanning Technology Bridging Microcircuits and Macroscale Brain Images in 3D Novel Embedding Overlapping Protocol
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在3D NAND闪存内存中进行Z干扰改进的新型程序方案.

Jianquan Jia1,2, Lei Jin1,2, Xinlei Jia1,2

  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

Micromachines
|July 8, 2023
PubMed
概括

3D NAND闪存中的Z干扰随着缩放而恶化. 一种新的编程方法通过降低相邻电池通路电压来减少这种干扰,显著提高了缩放设备的可靠性.

科学领域:

  • 半导体设备物理 半导体设备物理
  • 材料科学 材料科学 材料科学

背景情况:

  • 细胞对细胞的z干扰是3DNAND充电陷内存的关键可靠性问题,由缩小的门长度 (Lg) 和门间距长度 (Ls) 加剧.
  • 这种现象对3D NAND技术的持续扩展构成了重大挑战.

研究的目的:

  • 研究3D NAND闪存中的编程操作期间z干扰的潜在机制.
  • 提出并验证一种新的编程方案,以减轻z干扰并提高细胞可靠性.

主要方法:

  • 利用技术计算机辅助设计 (TCAD) 模拟来建模和分析z干扰机制.
  • 采用数据验证来确认模拟结果并评估拟议方案的有效性.

主要成果:

  • 识别了在编程过程中调节的细胞间被困电荷,作为z干扰的关键贡献者.
  • 通过降低相邻电池的通行电压 (Vpass),拟议的方案在Lg/Ls = 31/20 nm的擦除电池中实现了40.1%的值电压 (Vth) 转移的抑制.
  • 分析提供了关于优化程序干扰和z干扰之间的平衡的见解,用于缩放的Lg-Ls.

结论:

  • 这种新的编程方案有效地抑制了3D NAND闪存中的z干扰.
  • 这种方法提供了一个可行的解决方案,可以提高缩放的3D NAND设备的可靠性.
关键词:
3D NAND是一个3D NAND.邻近的门通过电压.细胞对细胞的z干扰程序电荷捕获记忆器的电荷捕获记忆器

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  • 进一步的分析支持对未来NAND闪存扩展的编程策略进行优化.