Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Biasing of FET01:22

Biasing of FET

275
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
275
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

257
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
257
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

336
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
336

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Targeting MCL-1 and MAPK overcomes venetoclax resistance in FLT3-ITD-positive AML cells harbouring activating PTPN11 (SHP-2) mutations.

British journal of haematology·2026
Same author

Unlocking silicon's hidden talent for spin quantum photonics.

Nature nanotechnology·2025
Same author

High-speed, widely tunable bidirectional 1310 nm MEMS VCSELs for OCT imaging.

Optics express·2025
Same author

A nanolaser with extreme dielectric confinement.

Science advances·2025
Same author

Polygenic Scores and Environmental Factors in Psychiatric Disorders: Gene-Environment Interaction Analyses Using the iPSYCH Study.

Research square·2025
Same author

3D Imaging of Optical Modes in Dielectric Photonic Nanocavities with Sub-wavelength Field Confinement.

Nano letters·2025

相关实验视频

Updated: Jul 3, 2025

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.1K

双向静电MEMS调节的VCSELs是双向的

Arnhold Simonsen, Masoud Payandeh, Søren Engelberth Hansen

    Optics letters
    |February 15, 2024
    PubMed
    概括
    此摘要是机器生成的。

    双向MEMS VCSEL提供更快,更线性波长调整. 这一突破使用静态电压来放大调,达到54.5nm范围在2.73MHz.

    更多相关视频

    Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
    11:44

    Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

    Published on: August 15, 2014

    10.3K
    Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
    08:21

    Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

    Published on: March 20, 2015

    12.4K

    相关实验视频

    Last Updated: Jul 3, 2025

    Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
    15:25

    Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

    Published on: February 4, 2018

    6.1K
    Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
    11:44

    Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

    Published on: August 15, 2014

    10.3K
    Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
    08:21

    Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

    Published on: March 20, 2015

    12.4K

    科学领域:

    • 光电学是指光电子产品.
    • 光子学是指光子学的使用方法.
    • 在MEMS技术方面,

    背景情况:

    • 微电子机械系统 (MEMS) 垂直腔表面发射激光器 (VCSEL) 已知具有快速,连贯的波长调整.
    • 在MEMS VCSEL中标准的静电驱动具有非线性,并且需要高电压 (>100 V) 来实现MHz扫描速率.

    研究的目的:

    • 呈现一个双向MEMS VCSEL设计.
    • 使用静态电压实现基本的线性和放大波长调.
    • 为了展示高速调能力.

    主要方法:

    • 使用了双向MEMS VCSEL架构.
    • 采用了InP/SOI MEMS债券结构.使用了InP/SOI MEMS债券结构.
    • 应用静态电压以增强调线性和范围.

    主要成果:

    • 实现了54.5纳米波长调范围,受益限制.
    • 调集中在1586nm左右.
    • 在2.73MHz的启动频率上经过证明的操作.

    结论:

    • 双向MEMS VCSEL有效地解决了标准静电驱动的局限性.
    • 静态电压的应用使线性和放大波长调整成为可能.
    • 这项技术促进了高速,宽范围可调节激光器.