在Cu3N中对两极控制进行大小依赖的同价杂质兴奋剂
Kosuke Matsuzaki1, Chen-Wei Chang2, Teruya Nagafuji3
1National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.
Journal of the American Chemical Society
|August 24, 2024
概括
这项研究引入了一种使用同价金属杂质的铜化物半导体的新兴奋剂方法. 使用,和进行尺寸依赖的注,可对先进半导体应用的n型和p型导电性进行精确控制.
科学领域:
- 材料科学
- 固态物理
- 半导体物理
背景情况:
- 用有价值杂质进行替代注是半导体双极控制的关键.
- 单价离子化合物在p型注中面临限制,原因是缺乏合适的价杂质.
研究的目的:
- 探索使用同价金属杂质的基于Cu (I) 的半导体的替代注策略.
- 通过杂质大小操纵,在化铜中实现可控的p型和n型注.
主要方法:
- 在铜化物中研究同价 (Li), (Cs) 和 (Rb) 的兴奋剂作用.
- 使用第一原理计算来了解杂质行为和缺陷形成.
- 通过杂质大小变化控制电子和孔度.
主要成果:
- 在间位较小的杂物增强了n型导电性 (10^15到10^18cm^-3).
- 较大的Cs和Rb杂质通过形成受体缺陷复合物诱导了p型转换 (10^14到10^17cm^-3).
- 由于离子排斥,作为浅度供体,而Cs/Rb则促进Cu空缺.
结论:
- 同等价值杂质大小依赖的兴奋剂为半导体兴奋剂提供了新的途径.
- 这种方法在单价离子化合物中提供可调的n型和p型导电性.
- 允许使用铜化物和类似半导体的光电子设备的进步.
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