Cu3N

Kosuke Matsuzaki1, Chen-Wei Chang2, Teruya Nagafuji3

  • 1National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.

概括

这项研究引入了一种使用同价金属杂质的铜化物半导体的新兴奋剂方法. 使用,和进行尺寸依赖的注,可对先进半导体应用的n型和p型导电性进行精确控制.

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