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电阻开关设备的TCAD模拟:ReRAM配置对神经形态计算的影响.

Seonggyeom Kim1, Jonghwan Lee1

  • 1Department of System Semiconductor Engineering, Sangmyung University, Cheonan 31066, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|December 17, 2024
PubMed
概括

这项研究使用TCAD和动力蒙特卡洛模拟来模拟电阻切换内存 (ReRAM). 经过验证的ReRAM模型准确地预测了神经形态计算应用程序的设备行为.

关键词:
KMC (动力蒙特卡罗) 是指运动的蒙特卡罗电阻式随机访问存储器 (ReRAM) 是一种电阻式随机访问存储器.技术计算机辅助设计 (TCAD)纪念馆是为了纪念.神经形态计算是一种神经形态计算.

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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