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在现场预金属化清理CoSi2接触孔图案,优化蚀刻过程.

Tae-Min Choi1, Eun-Su Jung1, Jin-Uk Yoo1

  • 1School of Integrative Engineering, Chung-Ang University, 84, Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea.

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概括

优化半导体制造中的接触孔的喷蚀,涉及控制等离子体和射频功率. 这个过程会影响蚀刻速率,均性和基板损坏,这对设备性能至关重要.

关键词:
他们是喷的.接触孔清洁 接触孔清洁血诱导损伤引起的损伤治疗等离子体治疗在金属化前进行清洁.

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科学领域:

  • 材料科学 材料科学 材料科学
  • 半导体制造业 半导体制造业
  • 等离子体物理学的物理学

背景情况:

  • 在现场接触孔清洁对于半导体设备制造至关重要.
  • (Ar) 喷蚀刻是一种常见的金属化前清洁技术.
  • 控制过程变量是优化蚀刻配置文件,速率和最小化损坏的关键.

研究的目的:

  • 为了研究Ar喷射蚀刻参数对接触孔形状的影响.
  • 分析对蚀刻速率和基板损坏的影响.
  • 为了确定Si和CoSi2亚层蚀刻的最佳条件.

主要方法:

  • 系统变化Ar喷射蚀刻参数:等离子体功率,射频功率和Ar流量.
  • 对接触孔形状,蚀刻速率 (SiO2,Si,CoSi2) 和选择性比的分析.
  • 评估与DC偏差相关的物理损伤.

主要成果:

  • 增加的血功率降低了直流偏差,但增加了SiO2蚀刻速率;增加的射频功率提高了两者,效果更为显著.
  • 更高的Ar流速降低了蚀刻均性,并略有降低了DC偏差.
  • Si和CoSi2亚层蚀刻显示Si损耗高达31.7 Å/s,受到DC偏差的强烈影响.
  • 达到Si/CoSi2蚀刻选择性比约为1:2.
  • 亚化物/氧化物选择性比约为1:2.

结论:

  • 过程参数的优化,特别是射频和等离子电源,对于控制接触孔清洗中的Ar喷雾蚀刻至关重要.
  • 电流偏差是影响物理损伤和Si/CoSi2蚀刻速度的关键因素.
  • 优化的Ar喷射蚀刻可以实现不同材料层所需的选择性比.