β-Ga2O3 (100)

Qi Li1, Junlei Zhao2, Na Lin1

  • 1State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal materials, Shandong University, Jinan, Shandong 250100, China.

概括

高质量的氧化物 (β-Ga2O3) 薄膜通过移动的Ga adatoms驱动,通过步骤流生长. 晶体结构抑制了缺陷,使得先进的Ga2O3设备成为可能.

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