同时估计过程变化效应,工作功能的波动,和随机剂波动的门周围纳米板辅助场效应晶体管的同时估计
Sekhar Reddy Kola1,2, Yiming Li1,2,3,4,5,6,7
1Parallel and Scientific Computing Laboratory, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 300093, Taiwan.
Nanomaterials (Basel, Switzerland)
|September 12, 2025
概括
工艺变化,工作功能和补充剂波动显著影响亚-1nm门全方位纳米板补充场效应晶体管 (GAA Si NS CFETs),特别是影响状态外泄漏和静电功率. 了解这些变化效应对于设计可靠的下一代集成电路至关重要.
科学领域:
- 半导体设备物理学 半导体设备物理
- 先进的材料科学是先进的材料科学.
- 集成电路设计 集成电路设计
背景情况:
- 亚-1纳米技术节点需要先进的晶体管架构,如门式全方位纳米板互补场效晶体管 (GAA Si NS CFET).
- 工艺变化效应 (PVE),金属门工作功能波动 (WKF) 和随机剂波动 (RDF) 是纳米尺度设备变化的关键来源.
研究的目的:
- 系统地研究PVE,WKF和RDF对GAA Si NS CFETs电气特性的综合影响.
- 分析N-和P-FET对这些变性源的敏感性及其对非状态泄漏电流和功率消耗的影响.
主要方法:
- 在亚-1nm技术节点对GAA Si NS CFET进行了全面的统计分析.
- 对PVE,WKF和RDF对关键电气参数的联合影响的评估.
- 评估静态功耗的相对波动.
主要成果:
- PVE,WKF和RDF的相互作用导致N-/P-FET的两个N-/P-FET中显著的非状态泄漏电流波动.
- 由于在底部纳米板通道中的寄生性导电,P-FET对变异性表现出更高的敏感性.
- 单个波动的统计总和高估了组合效应的不到50%.
- 静态功耗显示了最大的相对波动 (约. 82.1%),具有挑战性的低功率应用.
结论:
- 对GAA NS CFETs来说,具有变性意识的设计和制造过程优化是必不可少的.
- 未来技术节点的坚固可靠的集成电路取决于减轻这些波动效应.
- 了解组合变异性影响对于推进半导体技术至关重要.
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