基于合纳米线阵列的可重新配置的光电子记忆架构,用于内存并行感知和计算
Lingchen Liu1,2, Zhexin Li1,2, Yiqiang Zheng1
1State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
National science review
|November 12, 2025
概括
本研究介绍了一种可重新配置的光电子记忆架构 (ROMA),用于高效的传感器内计算. 开发的纳米线记忆器使人工智能硬件能够实现先进的并行感知和内存计算.
科学领域:
- 材料科学 材料科学 材料科学
- 计算机工程 计算机工程
- 纳米技术纳米技术
背景情况:
- 在人工智能中优化计算冗余性需要先进的硬件功能集成,以适应新兴的计算范式.
- 对于并行感知和内存计算的设备设计提出了重大挑战.
研究的目的:
- 开发一款先进的集成功能内存,用于现场并行感知和传感器内计算.
- 为了展示一个可重新配置的光电子记忆架构 (ROMA) 基于杂的纳米线阵列.
主要方法:
- 基于In2S3-XAsX的memristor的制造,通过空位工程表现出可调节的光电子特性.
- 兴奋剂调节以控制记忆性能和光导电保留.
- 纳米线阵列的单体集成用于并行处理.
主要成果:
- 在In2S3-XAsX的memristor显示了有利的光导保持和可重新配置的光电子调制.
- 通过双重输出信号采样,在歧视性状态中实现了两级的改善.
- 在单个列上展示了对12位二进制光学信号的识别和编码.
结论:
- 可重新配置的光电子记忆架构 (ROMA) 为高度并行和分布式计算范式提供了高效的硬件基础.
- 在In2S3-XAsX中空白工程为可调节的memristive属性提供了一条途径.
- 这项工作推进了用于人工智能应用的传感器内计算.
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