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Updated: Aug 10, 2026
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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Synchrotron X-ray and ab initio studies of beta-Si3N4
D du Boulay1, N Ishizawa, T Atake
1Ceramics Research Laboratory, Nagoya Institute of Technology, Asahigaoka, Tajimi 507-0071, Japan.
Acta Crystallographica. Section B, Structural Science
|July 20, 2004
Abstract:
Almost absorption- and extinction-free single-crystal synchrotron X-ray diffraction data were measured at 150, 200 and 295 K for beta-Si3N4, silicon nitride, at a wavelength of 0.7 A. The true symmetry of this material has been the subject of minor controversy for several decades. No compelling evidence favouring the low-symmetry P6(3) model was identified in this study.
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