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Deep X-ray lithography with a tunable wavelength shifter at CAMD
C Khan Malek1, V Saile, H Manohara
1Center for Advanced Microstructures and Devices (CAMD), Louisiana State University, 3990 West Lakeshore Drive, Baton Rouge, LA 70803, USA.
Journal of Synchrotron Radiation
|July 21, 2004
Summary
A new X-ray lithography facility will enable high-energy investigations for microdevices. This advanced hard X-ray source supports research into thicker devices and mass-production techniques.
Area of Science:
- Materials Science
- Nanotechnology
- Physics
Background:
- The Center for Advanced Microstructures and Devices is expanding its capabilities.
- Advanced lithography techniques are crucial for microdevice fabrication.
Purpose of the Study:
- To introduce a new X-ray lithography facility.
- To enable high-energy X-ray lithography research.
- To investigate novel fabrication methods for microdevices.
Main Methods:
- Construction of a new X-ray lithography facility.
- Utilizing a 7.5 T superconducting three-pole wavelength shifter.
- Tuning the critical energy of the insertion device up to 11.2 keV.
Main Results:
- The facility will provide a tunable hard X-ray source.
- Enables optimization of photon spectra for resist thickness.
- Facilitates research on devices thicker than 1 mm.
Conclusions:
- The new facility will advance X-ray lithography capabilities.
- Supports exploration of high-energy lithography for advanced devices.
- Aids in studying cost-effective mass-production concepts for microdevices.
