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Ghosting caused by bulk charge trapping in direct conversion flat-panel detectors using amorphous selenium.

Wei Zhao1, G DeCrescenzo, Safa O Kasap

  • 1Department of Radiology, State University of New York at Stony Brook, L-4 Health Sciences Center, Stony Brook, New York 11794-8460, USA. wei.zhao@sunysb.edu

Medical Physics
|March 26, 2005
PubMed
Summary
This summary is machine-generated.

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Ghosting in amorphous selenium (a-Se) flat-panel detectors is caused by electron trapping. Reducing trapped charge concentration minimizes ghosting artifacts, improving image quality in medical imaging.

Area of Science:

  • Medical Physics
  • Materials Science
  • Imaging Technology

Background:

  • Direct flat-panel detectors utilizing amorphous selenium (a-Se) are increasingly used in clinical settings.
  • Ghosting, characterized by image persistence due to x-ray induced sensitivity changes, is a significant artifact in these detectors.
  • Understanding the underlying physical mechanisms of ghosting is crucial for artifact reduction.

Purpose of the Study:

  • To investigate the physical mechanisms responsible for ghosting in a-Se flat-panel detectors.
  • To correlate charge trapping phenomena with ghosting artifacts.
  • To develop methods for minimizing ghosting in a-Se detector systems.

Main Methods:

  • Correlating ghosting in electroded a-Se detectors with trapped charge concentration measured via the time-of-flight (TOF) method.

Related Experiment Videos

  • Performing measurements as a function of radiation exposure (X) and electric field strength (E(Se)).
  • Developing a method to quantify trapped electron density (n(t)) from TOF data and predict sensitivity changes.

    • Main Results:

    • X-ray sensitivity decreased with increasing radiation exposure (X).
    • Ghosting reduced with increasing electric field strength (E(Se)).
    • TOF curve changes indicated electron trapping in the a-Se bulk, with trapped electron density (n(t)) increasing with X.

    Conclusions:

    • Electron trapping in the a-Se bulk is the dominant mechanism causing ghosting.
    • Subsequent recombination of trapped electrons with x-ray generated free holes contributes to sensitivity changes.
    • The developed method accurately predicts sensitivity changes based on trapped charge concentration.