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Updated: Aug 3, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 2, 2013
Coulomb oscillations and Hall effect in quasi-2D graphite quantum dots
J Scott Bunch1, Yuval Yaish, Markus Brink
1Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, USA.
Abstract:
We perform low-temperature electrical transport measurements on gated, quasi-2D graphite quantum dots. In devices with low contact resistances, we use longitudinal and Hall resistances to extract carrier densities of 9.2-13 x 10(12) cm(-2) and mobilities of 200-1900 cm(2)/V.s. In devices with high resistance contacts, we observe Coulomb blockade phenomena and infer the charging energies and capacitive couplings. These experiments demonstrate that electrons in mesoscopic graphite pieces are delocalized over nearly the whole graphite piece down to low temperatures.
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