Lowest limit for detection of impurity concentration in semiconductors by fluorescence XAFS: resonant Raman

Y Takeda1, H Ofuchi, H Kyouzu

  • 1Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan. takeda@numse.nagoya-u.ac.jp

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