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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping
Jaakko Sormunen1, Juha Riikonen, Marco Mattila
1Optoelectronics Laboratory, Micronova, Helsinki University of Technology, P.O. Box 3500, FIN-02015 TKK, Finland. jaakko.sormunen@hut.fi
Abstract:
Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.

