Long germanium nanowires prepared by electrochemical etching

Germanium (Ge) nanowires have been produced by electrochemical etching of single-crystalline n-type Ge [100] in a HCl-containing aqueous electrolyte. Macropores could be etched at various etching currents after an optimized procedure for homogeneous pore nucleation was used. Because of the narrow band gap of Ge (0.66 eV), the leakage current through pore walls is much higher than that, for example, in Si, leading to a constant dissolution of the pore walls. At sufficiently high current densities, it is then possible to form nanowires with diameters determined by the width of the space charge region, ranging from roughly 50 to 500 nm, and a length of several hundred micrometers. The role of the space charge region for stabilizing pore formation and in the formation of nanowires will be discussed.