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Spin injection and detection in silicon.

Igor Zutić1, Jaroslav Fabian, Steven C Erwin

  • 1Department of Physics, State University of New York at Buffalo, 14260, USA.

Physical Review Letters
|August 16, 2006
PubMed
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Detecting spin in silicon is challenging due to its properties. This study proposes methods using spin-polarized transport and charge current symmetry to enable electrical spin injection detection in silicon.

Area of Science:

  • Solid State Physics
  • Materials Science
  • Quantum Information Science

Background:

  • Spin injection and detection in silicon are hindered by weak spin-orbit coupling and indirect band gaps.
  • Conventional optical methods are unsuitable for probing spin dynamics in silicon.
  • Developing electrical methods for spin manipulation in silicon is crucial for spintronics.

Purpose of the Study:

  • To propose novel approaches for overcoming the challenges in electrical spin injection and detection in silicon.
  • To investigate the feasibility of using spin-polarized transport across heterojunctions.
  • To explore the potential of exploiting charge current symmetry for spin detection.

Main Methods:

  • Development of a realistic theoretical transport model.

Related Experiment Videos

  • Incorporation of electron and hole spin dynamics within the model.
  • Analysis of charge current symmetry properties.

    • Main Results:

    • Two distinct methods based on spin-polarized transport across heterojunctions are proposed.
    • The model demonstrates that charge current symmetry can be a viable indicator of spin injection.
    • The proposed techniques are compatible with currently available experimental methods.

    Conclusions:

    • Electrical spin injection detection in silicon is achievable by leveraging charge current properties.
    • The proposed methods offer a pathway to overcome limitations of optical techniques.
    • This research paves the way for advancing silicon-based spintronic devices.