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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
All-electrical control of single ion spins in a semiconductor
Jian-Ming Tang1, Jeremy Levy, Michael E Flatté
1Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242-1479, USA.
Abstract:
We propose a method for all-electrical manipulation of single ion spins substituted into a semiconductor. Mn ions with a bound hole in GaAs form a natural example. Direct electrical manipulation of the ion spin is possible, because electric fields manipulate the orbital wave function of the hole, and through the spin-orbit coupling the spin is reoriented as well. Coupling ion spins can be achieved using gates to control the size of the hole wave function. Coherent manipulation of ionic spins may find applications in high-density storage and in scalable coherent or quantum information processing.
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