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Updated: Jul 19, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Coulomb blockade and transport in a chain of one-dimensional quantum dots
Michael M Fogler1, Sergey V Malinin, Thomas Nattermann
1Department of Physics, University of California San Diego, La Jolla, 9500 Gilman Drive, California 92093, USA.
Abstract:
A long one-dimensional wire with a finite density of strong random impurities is modeled as a chain of weakly coupled quantum dots. At low temperature T and applied voltage V its resistance is limited by breaks: randomly occurring clusters of quantum dots with a special length distribution pattern that inhibit the transport. Because of the interplay of interaction and disorder effects the resistance can exhibit T and V dependences that can be approximated by power laws. The corresponding two exponents differ greatly from each other and depend not only on the intrinsic electronic parameters but also on the impurity distribution statistics.
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