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Gigahertz modulation of GaAs-based bipolar cascade vertical cavity surface-emitting lasers
W J Siskaninetz1, J E Ehret, J D Albrecht
1Air Force Research Laboratory and Electrical and Computer Engineering Department, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433, USA.
Optics Letters
|December 23, 2006
Abstract:
The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface-emitting lasers operating at 980 nm with GaAs tunnel junctions and p-doped Al0.98Ga0.02As oxide apertures have been measured. We achieve -3 dB laser output modulations of 6.5 GHz for two-stage and 9.4 GHz for three-stage devices in response to small-signal current injection at an operating temperature of -50 degrees C.
