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Updated: Jul 16, 2026
09:48
Simultaneous Synthesis of Single-walled Carbon Nanotubes and Graphene in a Magnetically-enhanced Arc Plasma
Published on: February 2, 2012
Magnetically induced field effect in carbon nanotube devices
Georgy Fedorov1, Alexander Tselev, David Jiménez
1National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA. fedorov@magnet.fsu.edu
Nano Letters
|March 28, 2007
Summary
Field-effect transistors using quasi-metallic carbon nanotubes (CNTs) function under strong magnetic fields. Measurements reveal CNT chirality and Schottky barrier properties from temperature-dependent magnetoconductance.
Area of Science:
- Condensed matter physics
- Materials science
- Nanotechnology
Background:
- Carbon nanotubes (CNTs) offer unique electronic properties.
- Field-effect transistors (FETs) are crucial electronic components.
- Understanding CNT behavior in magnetic fields is essential for advanced electronics.
Purpose of the Study:
- To investigate the performance of CNT-based FETs under strong magnetic fields.
- To characterize the electronic properties of quasi-metallic CNTs.
- To analyze the influence of magnetic flux on device conductance.
Main Methods:
- Fabrication of three-terminal devices with CNT conduction channels.
- Application of strong magnetic fields to the devices.
- Measurement of temperature-dependent magnetoconductance.
- Analysis of off-state conductance variations with magnetic flux intensity.
Main Results:
- CNT-based FETs demonstrate functionality under strong magnetic fields.
- Off-state conductance exhibits exponential dependence on magnetic flux intensity.
- Quasi-metallic CNT chirality and Schottky barrier characteristics were successfully extracted.
Conclusions:
- Strong magnetic fields enable the operation of CNT-based FETs.
- Magnetoconductance measurements provide a method to determine CNT chirality and contact properties.
- This research advances the understanding of CNT electronics for potential applications.
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