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Room-temperature polariton lasing in semiconductor microcavities.

S Christopoulos1, G Baldassarri Höger von Högersthal, A J D Grundy

  • 1School of Physics and Astronomy, University of Southampton, Highfield, Southampton, SO17 1BJ, UK.

Physical Review Letters
|May 16, 2007
PubMed
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Researchers achieved a room-temperature polariton condensate in Gallium Nitride (GaN) microcavities. This breakthrough shows a significantly lower threshold for coherent light emission compared to existing semiconductor lasers.

Area of Science:

  • Solid State Physics
  • Quantum Optics
  • Materials Science

Background:

  • Coherent polariton states are crucial for advanced light-based technologies.
  • Achieving these states at room temperature with low energy input remains a challenge.
  • Gallium Nitride (GaN) is a promising material for optoelectronic devices.

Purpose of the Study:

  • To investigate the feasibility of achieving a coherent polariton state in bulk GaN microcavities at room temperature.
  • To determine the threshold characteristics for polariton condensation under optical pumping.
  • To analyze the emission properties of the observed polariton state.

Main Methods:

  • Fabrication of bulk GaN microcavities.
  • Nonresonant pulsed optical pumping experiments.

Related Experiment Videos

  • Angular and spectrally resolved luminescence measurements.

    • Main Results:

    • Observation of a room-temperature transition to a coherent polariton state in strong coupling regime.
    • A low emission threshold of 1 mW (29 microJ cm-2) was achieved, significantly lower than (In,Ga)N VCSELs.
    • Polariton emission was found to be strongly directional (beamed, +/-5 degrees) and spatially confined (~5 microm).

    Conclusions:

    • Bulk GaN microcavities can support room-temperature polariton condensates.
    • The observed low threshold signifies a major advancement for efficient coherent light sources.
    • The directional emission properties are advantageous for integrated photonic applications.