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Updated: Jul 13, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Evolution of a reactive surface via subsurface defect dynamics
J P Pierce1, N C Bartelt, K F McCarty
1Sandia National Laboratories, 7011 East Avenue, Livermore, California 94551, USA.
Abstract:
We find that the topography and composition of a reactive surface can evolve during epitaxy via motion of point and line defects within the material. We observe the response of a NiAl surface to an Al atom flux with low-energy electron microscopy. Initially, new NiAl layers grow as Al atoms exchange with bulk Ni atoms. When the surface is critically enriched in Al, condensation occurs at dislocations. They dissociate, move linearly, and leave tracks of altered composition and new atomic steps. We show how these dynamics depend on the identity and quantity of point defects near the surface.
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