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Dual-band pixelless upconversion imaging devices.
Le Ke Wu1, Hui Lian Hao, Wen Zhong Shen
1Department of Physics, Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China.
Optics Letters
|August 19, 2007
Summary
This study introduces a novel dual-band imaging device using photon frequency upconversion for mid-infrared and far-infrared detection. The device achieves high-quality imaging with excellent resolution and efficiency.
Area of Science:
- Optoelectronics
- Infrared Imaging
- Semiconductor Devices
Background:
- Mid-infrared (MIR) and far-infrared (FIR) imaging are crucial for various applications.
- Existing dual-band detectors often face challenges in performance and integration.
Purpose of the Study:
- To propose and develop a novel MIR and FIR dual-band imaging device.
- To demonstrate the feasibility of photon frequency upconversion for dual-band infrared detection.
Main Methods:
- Integration of a GaN/AlGaN detector with a GaN/AlGaN violet light emitting diode.
- Optimization of multiperiod GaN emitter/AlGaN barrier detectors.
- Analysis using modulation transfer function and upconversion efficiency.
Main Results:
- Successful demonstration of pixelless upconversion imaging in both MIR and FIR bands.
- Achieved good image resolution and high quantum efficiency.
- Demonstrated negligible crosstalk between the two bands.
Conclusions:
- The proposed GaN/AlGaN dual-band detector is effective for pixelless upconversion imaging.
- The device shows significant potential for advanced infrared imaging applications.
- The technology offers a promising solution for high-performance dual-band infrared detection.
