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Updated: Jul 7, 2026
10:42
Preparing an Isotopically Pure 229Th Ion Beam for Studies of 229mTh
Published on: May 3, 2019
Inverted end-Hall-type low-energy high-current gaseous ion source.
E M Oks1, A V Vizir, M V Shandrikov
1High Current Electronics Institute, Russian Academy of Sciences, Tomsk, Russia.
The Review of Scientific Instruments
|March 5, 2008
Summary
A new gaseous ion source generates low-energy, high-current ion beams using an inverted anode-cathode design and electron injection. This reliable, low-maintenance device offers efficient ion generation for various applications.
Area of Science:
- Plasma Physics
- Ion Beam Technology
- Materials Science
Background:
- Conventional ion sources face limitations in energy efficiency and plasma contamination.
- Existing technologies often struggle with high-current, low-energy ion beam generation.
- The need for advanced ion sources in sputtering, etching, and other ion technologies is growing.
Purpose of the Study:
- To explore a novel approach for generating low-energy, high-current gaseous ion beams.
- To develop and characterize a new ion source based on this technique.
- To assess the performance and applicability of the developed ion source.
Main Methods:
- Development of a DC high-current gaseous discharge ion source with electron injection.
- Inversion of anode and cathode placement compared to conventional end-Hall sources.
- Utilization of a cold hollow cathode for electron generation and injection.
- Operation in a diverging axial magnetic field with low discharge voltage.
Main Results:
- The developed ion source produces a DC ion flow with energy < 20 eV and current up to 2.5 A.
- Low plasma contamination (<0.1% metallic ions) and narrow ion energy spread (2-3 eV rms) were achieved.
- The source demonstrated high reliability, low maintenance, and long operational lifetime.
- Specific electric energy consumption was measured at 400 eV per ion.
Conclusions:
- The novel ion source design offers an effective method for low-energy, high-current ion beam generation.
- The source's characteristics make it suitable for plasma sputtering, etching, and other ion-based technologies.
- The device presents a reliable and efficient alternative to existing ion source technologies.
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