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Related Experiment Video

Updated: Jul 7, 2026

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes
13:49

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes

Published on: January 19, 2020

Highly charged ion beam applied to lithography technique.

Sadao Momota1, Yoichi Nojiri, Jun Taniguchi

  • 1Kochi University of Technology, Kami, Kochi, Japan.

The Review of Scientific Instruments
|March 5, 2008
PubMed
Summary

Highly charged ion (HCI) beams significantly improve ion-beam lithography (IBL) for fabricating nanoscale 3D structures. Using Ar(9+) beams reduces etching time and increases etching depth in spin-on glass and silicon.

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Area of Science:

  • Nanotechnology
  • Materials Science
  • Surface Science

Background:

  • The demand for nanoscale three-dimensional (3D) structures is growing across various scientific fields.
  • Efficient fabrication methods are crucial for advancing nanotechnology.
  • Ion-beam lithography (IBL) is a key technique for precise material modification.

Purpose of the Study:

  • To investigate the efficacy of highly charged ion (HCI) beams in ion-beam lithography (IBL) for fabricating nanoscale 3D structures.
  • To explore the influence of ion charge state, energy, and dose on the etching process.
  • To evaluate the potential of HCI-IBL for advanced 3D nanostructure fabrication.

Main Methods:

  • Utilized Ar-ion beams with charge states ranging from 1+ to 9+.
  • Employed an electron cyclotron resonance ion source (NANOGAN, 10 GHz) for ion preparation.
  • Applied IBL to etch spin-on glass (SOG) and silicon substrates.
  • Systematically varied ion charge state, energy, and dose during fabrication.

Main Results:

  • Application of Ar(9+) beams led to reduced etching times for SOG.
  • Ar(9+) beams demonstrated enhanced etching depth compared to lower charge states.
  • Etching depth was found to be controllable via the kinetic energy of the Ar ions.
  • Anomalously deep structural changes were observed in glass materials, consistent with high-energy deposition.

Conclusions:

  • HCI beams offer a promising advancement for IBL-based nanoscale 3D fabrication.
  • The charge state of ions significantly impacts etching efficiency and depth.
  • IBL with HCI beams provides a controllable method for creating complex 3D nanostructures.
  • This technique holds potential for applications requiring precise 3D nanostructure fabrication.