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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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Large anisotropy of electrical properties in layer-structured In2Se3 nanowires

Hailin Peng1, Chong Xie, David T Schoen

  • 1Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.

Nano Letters
|April 15, 2008
PubMed

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