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Raman scattering of Si matrix with randomly distributed nanoparticles of semiconducting silicides
M Baleva1, A Atanassov, M Marinova
1Faculty of Physics, Sofia University, 5 J. Boucher Blvd., 1164 Sofia, Bulgaria.
Abstract:
Samples, representing Si matrix with nanoformations of the semiconducting silicides beta-FeSi2 and Mg2Si are studied by Raman scattering. The unpolarized Raman spectra of the samples are interpreted in the framework of the appearance of interface-phonon polaritons. The theoretical dispersion relations of the interface-phonon polaritons in the system Si/silicide/Si are obtained from the Maxwell equations. The correspondence of the theoretical calculations and the experimental observations appeared to be sufficiently good. An evolution of the features in the Raman spectra on the experimental conditions is observed.

