Recrystallization: Solid–Solution Equilibria
X-ray Crystallography
Polymer Classification: Crystallinity
X-ray Diffraction of Biological Samples
Imperfections in Crystal Structure: Point, Line and Plane Defects
Determination of Crystal Structures
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Jul 4, 2026

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
Published on: June 7, 2018
M J Beck1, R D Schrimpf, D M Fleetwood
1Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA. m.beck@vanderbilt.edu
Low-energy ion implantation in silicon (Si) creates disordered regions, not just point defects. Dynamic annealing and recrystallization control defect formation even after low-energy recoils.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: