The integration solution of copper barrier deposition for nanometer interconnect process

Area of Science:

• Materials Science
• Semiconductor Manufacturing
• Nanotechnology

Background:

• Device dimensions are rapidly shrinking, increasing metallization requirements.
• Physical vapor deposition (PVD) is standard for via barrier and seeding layers in interconnection metallization.
• Nano-scale interconnections require thinner barrier layers, challenging film conformity and continuity.

Purpose of the Study:

• To investigate the integration of a re-sputter process step into conventional PVD.
• To evaluate the impact of re-sputtering on via barrier and seeding layer deposition for nano-scale features.
• To assess improvements in film properties and via resistance.

Main Methods:

• Integration of a re-sputter process step with conventional physical vapor deposition.
• Analysis of film conformity and continuity within via features.
• Measurement of via resistance and evaluation of film properties.

Main Results:

• The re-sputter process significantly improved film conformity and continuity along via sidewalls.
• Via resistance was reduced by over 20% with the integrated re-sputter method.
• The study discussed the effects of the re-sputter process on barrier film properties.

Conclusions:

• The re-sputter enhanced PVD method is a viable solution for standard barrier deposition in nano-scale interconnects.
• This technique addresses challenges in film conformity and continuity for advanced metallization.
• The improved barrier deposition contributes to reliable performance of next-generation electronic devices.