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Electroluminescence from single-wall carbon nanotube network transistors
1Regroupement Québécois sur les Matériaux de Pointe (RQMP), Département de Génie Physique, Ecole Polytechnique de Montréal, Montréal, Canada.
Nano Letters
|July 5, 2008
Summary
Single-wall carbon nanotube network field-effect transistors (NNFETs) exhibit broad electroluminescence (EL) spectra, distinct from narrow spectra in small bundle carbon nanotube field-effect transistors (CNFETs). This study reveals carrier distribution significantly impacts the optoelectronic properties of carbon nanotube films.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Electroluminescence (EL) is a key optoelectronic property of carbon nanotube (CNT) materials.
- Understanding EL in different CNT configurations is crucial for device applications.
Purpose of the Study:
- To investigate and compare the near-infrared (NIR) electroluminescence (EL) properties of single-wall carbon nanotube network field-effect transistors (NNFETs) and small bundle carbon nanotube field-effect transistors (CNFETs).
- To elucidate the underlying emission mechanisms and the influence of carrier distribution on EL spectra.
Main Methods:
- Spectroscopy and imaging techniques were employed to analyze EL emission in the NIR region.
- A phenomenological model based on Fermi-Dirac carrier distribution was developed to interpret spectral features.
Main Results:
- NNFETs displayed broad (approx. 180 meV) and structured NIR EL spectra at room temperature, contrasting with narrower spectra (approx. 80 meV) from CNFETs.
- EL emission in NNFETs was localized near the drain contact and showed a red-shift relative to absorption spectra.
- The experimental spectral features were successfully reproduced by the phenomenological model.
Conclusions:
- Bipolar (electron-hole) current recombination is supported as the primary mechanism for EL emission in these devices.
- Carrier distribution within the nanotube network significantly influences the observed optoelectronic properties, particularly EL spectra.
- The findings provide insights into the fundamental physics governing light emission in CNT-based electronic devices.
